Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs

Traditional lumped small signal equivalent circuit models of AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) are made up constant valued elements. Such unable to capture the frequency behavior (above 20 GHz) device. In this work, a modified model MOS-HEMTs is presented. The key feature proposed that values different elements in considered be dependent nature and not constants. value each element mathematically represented using polynomial functions where coefficients determined via least-square curve fitting approach. This attribute ensures very accurate at frequencies without sacrificing compactness topology. accuracy has been verified 50 GHz experimentally measured Y-parameters having gate dielectric length.